{"product_id":"micron-technology-dram-sdram-ddr4-part-mt40a512m16ly-062e-e-tr-dynamic-random-access-memory-dex","title":"Micron Technology DRAM SDRAM-DDR, Part #: MT40A512M16LY-062E:E TR | Dynamic random access memory | DEX","description":"\u003cp\u003eMicron Technology DRAM SDRAM-DDR4, Part #: MT40A512M16LY-062E:E TR features: \u003c\/p\u003e\n\u003cp\u003eVDD = VDDQ = 1.2V +\/-60mv\u003cbr data-mce-fragment=\"1\"\u003eVPP = 2.5V, -125mV, +\/-250mV\u003cbr data-mce-fragment=\"1\"\u003eOn-die, internal, adjustable VREFDQ generation\u003cbr data-mce-fragment=\"1\"\u003e1.2V pseudo open-drain I\/O\u003cbr data-mce-fragment=\"1\"\u003eRefresh time of 8192-cycle at TC temperature range:\u003cbr data-mce-fragment=\"1\"\u003e16 internal banks (x4, x8): 4 groups of 4 banks each\u003cbr data-mce-fragment=\"1\"\u003e8n-bit prefetch architecture\u003cbr data-mce-fragment=\"1\"\u003eProgrammable data strobe preambles\u003cbr data-mce-fragment=\"1\"\u003eData strobe preamble training \u003cbr data-mce-fragment=\"1\"\u003eCommand\/Address latency (CAL)\u003cbr data-mce-fragment=\"1\"\u003eMultipurpose register READ and WRITE capability\u003cbr data-mce-fragment=\"1\"\u003eWrite Leveling\u003cbr data-mce-fragment=\"1\"\u003eSelf refresh mode\u003cbr data-mce-fragment=\"1\"\u003eLow-power auto self refresh (LPSAR)\u003cbr data-mce-fragment=\"1\"\u003eTemperature controlled refresh (TCR)\u003cbr data-mce-fragment=\"1\"\u003eFine granularity refresh\u003cbr data-mce-fragment=\"1\"\u003eSelf refresh abort\u003cbr data-mce-fragment=\"1\"\u003eMaximum power saving\u003cbr data-mce-fragment=\"1\"\u003eOutput driver calibration\u003cbr data-mce-fragment=\"1\"\u003eNominal, park and dynamic on-die termination (ODT)\u003cbr data-mce-fragment=\"1\"\u003eData bus inversion (DBI) for data bus\u003cbr data-mce-fragment=\"1\"\u003eCommand\/Address (CA) parity\u003cbr data-mce-fragment=\"1\"\u003eDatabus write cyclic redundancy check (CRC)\u003cbr data-mce-fragment=\"1\"\u003ePer-DRAM addressability\u003cbr data-mce-fragment=\"1\"\u003eConnectivity test\u003cbr data-mce-fragment=\"1\"\u003eJEDEC JESD-79-4 compliant \u003cbr data-mce-fragment=\"1\"\u003esPPR and hPPR capability \u003cbr data-mce-fragment=\"1\"\u003eMBIST-PPR support (Die Revision R only)\u003cbr data-mce-fragment=\"1\"\u003e \u003c\/p\u003e\n\u003cp\u003eMIL:MT40A512M16LY-062E E TR\u003c\/p\u003e\n\u003cp\u003eMT40A512M16LY-062E:E TR\u003c\/p\u003e","brand":"Micron Technology","offers":[{"title":"Default Title","offer_id":43011704094919,"sku":"MIL:MT40A512M16LY-062E E TR","price":11.54,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0480\/2750\/0701\/products\/micron-technology-dram-sdram-ddr-part-mt40a512m16ly-062ee-tr-dynamic-random-access-memory-dex-information-technology-micron-technology-558185.jpg?v=1674084430","url":"https:\/\/edexdealstest.myshopify.com\/en-emea\/products\/micron-technology-dram-sdram-ddr4-part-mt40a512m16ly-062e-e-tr-dynamic-random-access-memory-dex","provider":"DEX TEST","version":"1.0","type":"link"}