{"product_id":"micron-technology-dram-sdram-ddr3l-part-mt41k64m16tw-107-j-tr-dynamic-random-access-memory-dex","title":"Micron Technology DRAM , Part #: MT41K64M16TW-107:J TR | Dynamic random access memory | DEX","description":"\u003cp\u003eMicron Technology DRAM SDRAM-DDR3L, Part #: MT41K64M16TW-107:J TR features: • VDD = VDDQ = +1.35V (1.283V to 1.45V) • Backward compatible to VDD = VDDQ = 1.5V ±0.075V • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS (READ) latency (CL) • Programmable CAS additive latency (AL) • Programmable CAS (WRITE) latency (CWL) • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) • Selectable BC4 or BL8 on-the-fly (OTF) • Self refresh mode • TC of 95°C – 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at \u0026gt;85°C to 95°C • Self refresh temperature (SRT) • Automatic self refresh (ASR) • Write leveling • Multipurpose register • Output driver calibration\u003c\/p\u003e\n\u003cp\u003e \u003c\/p\u003e\n\u003cp\u003eMIL:MT41K64M16TW-107 J TR\u003c\/p\u003e\n\u003cp\u003eMT41K64M16TW-107:J TR\u003c\/p\u003e","brand":"Micron Technology","offers":[{"title":"Default Title","offer_id":43011707076807,"sku":"MIL:MT41K64M16TW-107 J TR","price":5.12,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0480\/2750\/0701\/products\/micron-technology-dram-part-mt41k64m16tw-107j-tr-dynamic-random-access-memory-dex-information-technology-micron-technology-566393.jpg?v=1674084556","url":"https:\/\/edexdealstest.myshopify.com\/en-emea\/products\/micron-technology-dram-sdram-ddr3l-part-mt41k64m16tw-107-j-tr-dynamic-random-access-memory-dex","provider":"DEX TEST","version":"1.0","type":"link"}