{"product_id":"micron-technology-dram-rldram2-part-mt49h16m36sj-18-b-dynamic-random-access-memory-dex","title":"Micron Technology DRAM SDRAMMobile-, Part #: MT49H16M36SJ-18:B | Dynamic random access memory | DEX","description":"\u003cp\u003eMicron Technology DRAM RLDRAM2, Part #: MT49H16M36SJ-18:B features: • 533 MHz DDR operation (1.067 Gb\/s\/pin data rate) • 38.4 Gb\/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization – 64 Meg x 9, 32 Meg x 18, and 16 Meg x 36 I\/O – 8 banks • Reduced cycle time (15ns at 533 MHz) • Nonmultiplexed addresses (address multiplexing option available) • SRAM-type interface • Programmable READ latency (RL), row cycle time, and burst sequence length • Balanced READ and WRITE latencies in order to optimize data bus utilization • Data mask for WRITE commands • Differential input clocks (CK, CK#) • Differential input data clocks (DKx, DKx#) • On-die DLL generates CK edge-aligned data and output data clock signals • Data valid signal (QVLD) • 32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms) • HSTL I\/O (1.5V or 1.8V nominal) • –Ω matched impedance outputs • 2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I\/O • On-die termination (ODT) RTT\u003c\/p\u003e\n\u003cp\u003e \u003c\/p\u003e\n\u003cp\u003eMIL:MT49H16M36SJ-18 B\u003c\/p\u003e\n\u003cp\u003eMT49H16M36SJ-18:B\u003c\/p\u003e","brand":"MICRON TECHNOLOGY INC","offers":[{"title":"Default Title","offer_id":43011691151559,"sku":"MIL:MT49H16M36SJ-18 B","price":61.76,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0480\/2750\/0701\/products\/micron-technology-dram-sdrammobile-part-mt46h32m16lfbf-5-itc-tr-dynamic-random-access-memory-dex-information-technology-micron-technology-781669.jpg?v=1674083860","url":"https:\/\/edexdealstest.myshopify.com\/en-emea\/products\/micron-technology-dram-rldram2-part-mt49h16m36sj-18-b-dynamic-random-access-memory-dex","provider":"DEX TEST","version":"1.0","type":"link"}