{"product_id":"micron-technology-dram-sdram-ddr3l-part-mt41k128m16jt-125-aat-k-tr-dynamic-random-access-memory-dex","title":"Micron Technology DRAM RLDRAM2, Part #MT41K128M16JT-125 AAT:K TR | Dynamic random access memory | DEX","description":"\u003cp\u003eThe 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.\u003c\/p\u003e\n\u003cp\u003e \u003c\/p\u003e\n\u003cp\u003eFeatures\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eVDD = VDDQ = 1.35V (1.283–1.45V)\u003c\/li\u003e\n\u003cli\u003eBackward-compatible to VDD = VDDQ = 1.5V ±0.075V\u003c\/li\u003e\n\u003cli\u003eDifferential bidirectional data strobe\u003c\/li\u003e\n\u003cli\u003e8n-bit prefetch architecture\u003c\/li\u003e\n\u003cli\u003eDifferential clock inputs (CK, CK#)\u003c\/li\u003e\n\u003cli\u003e8 internal banks \u003c\/li\u003e\n\u003cli\u003eNominal and dynamic on-die termination (ODT) for data, strobe, and mask signals\u003c\/li\u003e\n\u003cli\u003eProgrammable CAS (READ) latency (CL)\u003c\/li\u003e\n\u003cli\u003eProgrammable posted CAS additive latency (AL)\u003c\/li\u003e\n\u003cli\u003eProgrammable CAS (WRITE) latency (CWL)\u003c\/li\u003e\n\u003cli\u003eFixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) \u003c\/li\u003e\n\u003cli\u003eSelectable BC4 or BL8 on-the-fly (OTF)\u003c\/li\u003e\n\u003cli\u003eSelf refresh mode\u003c\/li\u003e\n\u003cli\u003eRefresh maximum interval time at TC temperature range – 64ms at –40°C to +85°C – 32ms at +85°C to +105°C – 16ms at +105°C to +115°C – 8ms at +115°C to +125°C\u003c\/li\u003e\n\u003cli\u003eSelf refresh temperature (SRT)\u003c\/li\u003e\n\u003cli\u003eAutomatic self refresh (ASR)\u003c\/li\u003e\n\u003cli\u003eWrite leveling\u003c\/li\u003e\n\u003cli\u003eMultipurpose register\u003c\/li\u003e\n\u003cli\u003eOutput driver calibration\u003c\/li\u003e\n\u003cli\u003eAEC-Q100\u003c\/li\u003e\n\u003cli\u003ePPAP submission\u003c\/li\u003e\n\u003cli\u003e8D response time\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003e \u003c\/p\u003e\n\u003cp\u003eMIL:MT41K128M16JT-125 AAT:K TR\u003c\/p\u003e\n\u003cp\u003eMT41K128M16JT-125 AAT:K TR\u003c\/p\u003e","brand":"Micron Technology","offers":[{"title":"Default Title","offer_id":43011706454215,"sku":"MIL:MT41K128M16JT-125 AAT K TR","price":12.03,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0480\/2750\/0701\/products\/micron-technology-dram-rldram2-part-mt41k128m16jt-125-aatk-tr-dynamic-random-access-memory-dex-information-technology-micron-technology-160213.jpg?v=1674084526","url":"https:\/\/edexdealstest.myshopify.com\/en-apac\/products\/micron-technology-dram-sdram-ddr3l-part-mt41k128m16jt-125-aat-k-tr-dynamic-random-access-memory-dex","provider":"DEX TEST","version":"1.0","type":"link"}