{"product_id":"micron-technology-dram-sdram-ddr2-part-mt47h64m16nf-25e-aat-m-tr-dynamic-random-access-memory-dex","title":"Micron Technology DRAM , Part #MT47H64M16NF-25E AAT:M TR | Dynamic random access memory | DEX","description":"\u003cp\u003eMicron Technology DRAM SDRAM-DDR2, Part #MT47H64M16NF-25E AAT:M TR\u003c\/p\u003e\n\u003cp\u003eThis addendum provides information to add Automotive Ultra-high Temperature (AUT) option2 for the data sheet. This addendum does not provide detailed information about the device. Refer to the full data sheet for a complete description of device functionality, operating modes, and specifications for the same Micron part number products.\u003c\/p\u003e\n\u003cp\u003e\u003cspan\u003eFeatures\u003c\/span\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eVDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V\u003c\/li\u003e\n\u003cli\u003eJEDEC-standard 1.8V I\/O (SSTL_18-compatible)\u003c\/li\u003e\n\u003cli\u003eDifferential data strobe (DQS, DQS#) option\u003c\/li\u003e\n\u003cli\u003e4n-bit prefetch architecture\u003c\/li\u003e\n\u003cli\u003eDuplicate output strobe (RDQS) option for x8\u003c\/li\u003e\n\u003cli\u003eDLL to align DQ and DQS transitions with CK\u003c\/li\u003e\n\u003cli\u003e8 internal banks for concurrent operation\u003c\/li\u003e\n\u003cli\u003eProgrammable CAS latency (CL)\u003c\/li\u003e\n\u003cli\u003ePosted CAS additive latency (AL)\u003c\/li\u003e\n\u003cli\u003eWRITE latency = READ latency - 1 tCK\u003c\/li\u003e\n\u003cli\u003eSelectable burst lengths (BL): 4 or 8\u003c\/li\u003e\n\u003cli\u003eAdjustable data-output drive strength\u003c\/li\u003e\n\u003cli\u003e64ms, 8192-cycle refresh\u003c\/li\u003e\n\u003cli\u003eOn-die termination (ODT)\u003c\/li\u003e\n\u003cli\u003eRoHS-compliant\u003c\/li\u003e\n\u003cli\u003eSupports JEDEC clock jitter specification\u003c\/li\u003e\n\u003cli\u003ePPAP submission\u003c\/li\u003e\n\u003cli\u003e8D response time\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003e \u003c\/p\u003e\n\u003cp\u003eMIL:MT47H64M16NF-25E AAT:M TR\u003c\/p\u003e\n\u003cp\u003eMT47H64M16NF-25E AAT:M TR\u003c\/p\u003e","brand":"MICRON TECHNOLOGY INC","offers":[{"title":"Default Title","offer_id":43011707404487,"sku":"MIL:MT47H64M16NF-25E AAT M TR","price":7.72,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0480\/2750\/0701\/products\/micron-technology-dram-part-mt47h64m16nf-25e-aatm-tr-dynamic-random-access-memory-dex-information-technology-micron-technology-526905.jpg?v=1674084570","url":"https:\/\/edexdealstest.myshopify.com\/en-apac\/products\/micron-technology-dram-sdram-ddr2-part-mt47h64m16nf-25e-aat-m-tr-dynamic-random-access-memory-dex","provider":"DEX TEST","version":"1.0","type":"link"}