{"product_id":"onsemi-digital-fet-n-channel-fdv301n-fdv301n-f1-part-fdv301n-mosfet-dex","title":"Onsemi Digital FET, N-Channel FDV301N, FDV301N-F1, Part #FDV301N | MOSFET | DEX","description":"\u003cp\u003eOnsemi Digital FET, N-Channel FDV301N, FDV301N-F1, Part #FDV301N | MOSFET | DEX features: • 25 V, 0.22 A Continuous, 0.5 A Peak ♦ RDS(on) = 5  @ VGS = 2.7 V ♦ RDS(on) = 4  @ VGS = 4.5 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) \u0026lt; 1.06 V • Gate−Source Zener for ESD Ruggedness. \u0026gt; 6 kV Human Body Model • Replace Multiple NPN Digital Transistors with One DMOS FET • This Device is Pb−Free and Halide Free\u003c\/p\u003e\n\u003cp\u003eThis N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values.\u003c\/p\u003e\n\u003cp\u003e \u003c\/p\u003e\n\u003cp\u003eOSM:FDV301N \u003c\/p\u003e\n\u003cp\u003eFDV301N \u003c\/p\u003e","brand":"onsemi","offers":[{"title":"Default Title","offer_id":43011611001031,"sku":"OSM:FDV301N","price":9.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0480\/2750\/0701\/products\/onsemi-digital-fet-n-channel-fdv301n-fdv301n-f1-part-fdv301n-mosfet-dex-information-technology-onsemi-159382.jpg?v=1674080885","url":"https:\/\/edexdealstest.myshopify.com\/en-amer\/products\/onsemi-digital-fet-n-channel-fdv301n-fdv301n-f1-part-fdv301n-mosfet-dex","provider":"DEX TEST","version":"1.0","type":"link"}