{"product_id":"micron-technology-dram-sdrammobile-part-mt46h64m32lfbq-48-wt-c-tr-dynamic-random-access-memory-dex","title":"Micron Technology DRAM SDRAM-DDR4, Part #: MT46H64M32LFBQ-48 WT:C TR | Dynamic random access memory | DEX","description":"\u003cp\u003eMicron Technology DRAM SDRAMMobile-, Part #: MT46H64M32LFBQ-48 WT:C TR features: • VDD\/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; 2 data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • 4 internal banks for concurrent operation • Data masks (DM) for masking write data—one mask per byte • Programmable burst lengths (BLs): 2, 4, 8, or 161 • Concurrent auto precharge option is supported • Auto refresh and self refresh modes • 1.8V LVCMOS-compatible inputs • On-chip temperature sensor to control self refresh rate • Partial-array self refresh (PASR) • Deep power-down (DPD) • STATUS REGISTER READ (SRR) supported2 • Selectable output drive strength (DS) • Clock stop capability • 64ms refresh\u003c\/p\u003e\n\u003cp\u003e \u003c\/p\u003e\n\u003cp\u003eMIL:MT46H64M32LFBQ-48 WT C TR\u003c\/p\u003e\n\u003cp\u003eMT46H64M32LFBQ-48 WT:C TR\u003c\/p\u003e","brand":"Micron Technology","offers":[{"title":"Default Title","offer_id":43011692265671,"sku":"MIL:MT46H64M32LFBQ-48 WT C TR","price":10.28,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0480\/2750\/0701\/products\/micron-technology-dram-sdram-ddr4-part-mt40a512m16tb-062er-tr-dynamic-random-access-memory-dex-information-technology-micron-technology-204073.jpg?v=1674083931","url":"https:\/\/edexdealstest.myshopify.com\/en-amer\/products\/micron-technology-dram-sdrammobile-part-mt46h64m32lfbq-48-wt-c-tr-dynamic-random-access-memory-dex","provider":"DEX TEST","version":"1.0","type":"link"}